FDMS86263P onsemi
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 983 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 192.57 грн |
10+ | 155.69 грн |
100+ | 125.95 грн |
500+ | 105.07 грн |
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Технічний опис FDMS86263P onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V.
Інші пропозиції FDMS86263P за ціною від 96.98 грн до 226.29 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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FDMS86263P | Виробник : onsemi / Fairchild | MOSFET PT5 150/25V Pch Pwr Trench MOSFET |
на замовлення 81232 шт: термін постачання 462-471 дні (днів) |
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FDMS86263P | Виробник : onsemi |
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
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FDMS86263P | Виробник : ON Semiconductor | Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
товар відсутній |
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FDMS86263P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Mounting: SMD Drain-source voltage: -150V Drain current: -4.4A On-state resistance: 64mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -70A Case: Power56 кількість в упаковці: 1 шт |
товар відсутній |
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FDMS86263P | Виробник : ON Semiconductor | Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
товар відсутній |
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FDMS86263P | Виробник : ON Semiconductor | Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
товар відсутній |
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FDMS86263P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Mounting: SMD Drain-source voltage: -150V Drain current: -4.4A On-state resistance: 64mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -70A Case: Power56 |
товар відсутній |