FDP8030L Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
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Технічний опис FDP8030L Fairchild Semiconductor
Description: MOSFET N-CH 30V 80A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V.
Інші пропозиції FDP8030L за ціною від 222.03 грн до 433.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FDP8030L | onsemi |
Description: MOSFET N-CH 30V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1023 шт: термін постачання 21-31 дні (днів) |
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| FDP8030L | N/A |
09+ |
на замовлення 20018 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| FDP8030L |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 433.36 грн |
| 10+ | 357.48 грн |
| 100+ | 297.93 грн |
| 500+ | 246.70 грн |
| 1000+ | 222.03 грн |