FDPF2D3N10C ONSEMI
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 152nC
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
| Кількість | Ціна |
|---|---|
| 1+ | 475.87 грн |
| 5+ | 364.00 грн |
| 10+ | 322.52 грн |
| 25+ | 296.28 грн |
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Технічний опис FDPF2D3N10C ONSEMI
Description: MOSFET N-CH 100V 222A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F, Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 222A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Vgs(th) (Max) @ Id: 4V @ 700µA, Power Dissipation (Max): 45W (Tc).
Інші пропозиції FDPF2D3N10C за ціною від 190.73 грн до 504.76 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDPF2D3N10C | onsemi / Fairchild |
MOSFETs PTNG N-CH 100V/120V |
на замовлення 832 шт: термін постачання 21-30 дні (днів) |
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FDPF2D3N10C | onsemi |
Description: MOSFET N-CH 100V 222A TO220F Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 222A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 700µA Power Dissipation (Max): 45W (Tc) |
на замовлення 721 шт: термін постачання 21-31 дні (днів) |
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| FDPF2D3N10C |
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Виробник: onsemi / Fairchild
MOSFETs PTNG N-CH 100V/120V
MOSFETs PTNG N-CH 100V/120V
на замовлення 832 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 498.02 грн |
| 10+ | 372.02 грн |
| 100+ | 251.06 грн |
| 500+ | 213.79 грн |
| FDPF2D3N10C |
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Виробник: onsemi
Description: MOSFET N-CH 100V 222A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 700µA
Power Dissipation (Max): 45W (Tc)
Description: MOSFET N-CH 100V 222A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 700µA
Power Dissipation (Max): 45W (Tc)
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 504.76 грн |
| 10+ | 329.50 грн |
| 100+ | 240.53 грн |
| 500+ | 190.73 грн |