FDS8928A ON Semiconductor
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 609+ | 49.98 грн |
| 1000+ | 47.21 грн |
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Технічний опис FDS8928A ON Semiconductor
Description: MOSFET N/P-CH 30V/20V 5.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції FDS8928A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDS8928A | Виробник : ON Semiconductor |
 Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC T/R |
товару немає в наявності |
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| FDS8928A | Виробник : ON Semiconductor |
Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC T/R |
товару немає в наявності |
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FDS8928A | Виробник : onsemi |
Description: MOSFET N/P-CH 30V/20V 5.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
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FDS8928A | Виробник : onsemi |
Description: MOSFET N/P-CH 30V/20V 5.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
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FDS8928A | Виробник : onsemi / Fairchild |
MOSFET SO-8 COMP N-P-CH |
товару немає в наявності |
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FDS8928A | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-20V Drain current: 5.5/4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±8V On-state resistance: 38/72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 28/28nC |
товару немає в наявності |