Технічний опис FGA15N120FTDTU ON Semiconductor
Description: IGBT 1200V 30A 220W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 575 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Gate Charge: 100 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 220 W.
Інші пропозиції FGA15N120FTDTU
| Фото | Назва | Виробник | Інформація |
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FGA15N120FTDTU | Виробник : onsemi |
 Description: IGBT 1200V 30A 220W TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 575 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Gate Charge: 100 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 220 W |
товар відсутній |
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FGA15N120FTDTU | Виробник : onsemi / Fairchild |
IGBT Transistors 1200V 15A Field Stop Trench |
товар відсутній |