FQT4N20LTF onsemi
Виробник: onsemiDescription: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
на замовлення 3101 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.45 грн |
| 10+ | 43.52 грн |
| 100+ | 30.13 грн |
| 500+ | 23.62 грн |
| 1000+ | 20.11 грн |
| 2000+ | 17.91 грн |
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Технічний опис FQT4N20LTF onsemi
Description: MOSFET N-CH 200V 850MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Інші пропозиції FQT4N20LTF за ціною від 16.87 грн до 56.19 грн
| Фото | Назва | Виробник | Інформація |
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FQT4N20LTF | Виробник : onsemi / Fairchild |
MOSFET 200V Single |
на замовлення 64821 шт: термін постачання 21-30 дні (днів) |
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FQT4N20LTF | Виробник : ON Semiconductor |
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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FQT4N20LTF | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Mounting: SMD Polarisation: unipolar Technology: QFET® Drain current: 0.68A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 1.4Ω Power dissipation: 2.2W Gate charge: 5.2nC кількість в упаковці: 1 шт |
товар відсутній |
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FQT4N20LTF | Виробник : onsemi |
Description: MOSFET N-CH 200V 850MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
товар відсутній |
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FQT4N20LTF | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Mounting: SMD Polarisation: unipolar Technology: QFET® Drain current: 0.68A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 1.4Ω Power dissipation: 2.2W Gate charge: 5.2nC |
товар відсутній |