на замовлення 151861 шт:
термін постачання 798-807 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.52 грн |
| 10+ | 45.65 грн |
| 100+ | 27.54 грн |
| 500+ | 23 грн |
| 1000+ | 19.58 грн |
| 2000+ | 17.42 грн |
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Технічний опис FQT5P10TF onsemi / Fairchild
Description: MOSFET P-CH 100V 1A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Інші пропозиції FQT5P10TF
| Фото | Назва | Виробник | Інформація |
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FQT5P10TF Код товару: 169563 |
 Транзистори > Польові P-канальні |
товар відсутній
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FQT5P10TF | Виробник : ON Semiconductor |
Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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FQT5P10TF | Виробник : ON Semiconductor |
Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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FQT5P10TF | Виробник : ON Semiconductor |
Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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FQT5P10TF | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -800mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQT5P10TF | Виробник : onsemi |
Description: MOSFET P-CH 100V 1A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
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FQT5P10TF | Виробник : onsemi |
Description: MOSFET P-CH 100V 1A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
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FQT5P10TF | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -800mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |