G3F40MT12K GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 767.20 грн |
| 10+ | 653.30 грн |
| 30+ | 533.55 грн |
| 120+ | 511.00 грн |
| 270+ | 495.49 грн |
| 510+ | 488.44 грн |
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Технічний опис G3F40MT12K GeneSiC Semiconductor
Description: 1200V 40M TO-247-4 G3F SIC MOSFE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 16mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції G3F40MT12K за ціною від 634.32 грн до 1075.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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G3F40MT12K | Navitas Semiconductor, Inc. |
 Description: 1200V 40M TO-247-4 G3F SIC MOSFEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 16mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
|
| G3F40MT12K |
|
Виробник: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-247-4 G3F SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V 40M TO-247-4 G3F SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Qualification: AEC-Q101
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1075.21 грн |
| 30+ | 634.32 грн |