G3R12MT12K GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 4690.38 грн |
| 10+ | 4478.29 грн |
| 30+ | 3214.00 грн |
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Технічний опис G3R12MT12K GeneSiC Semiconductor
Description: 1200V 12M TO-247-4 G3R SIC MOSFE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 157A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V, Power Dissipation (Max): 567W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 50mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V.
Інші пропозиції G3R12MT12K за ціною від 3309.10 грн до 4829.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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G3R12MT12K | Navitas Semiconductor, Inc. |
 Description: 1200V 12M TO-247-4 G3R SIC MOSFEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 157A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V Power Dissipation (Max): 567W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 50mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V |
на замовлення 1538 шт: термін постачання 21-31 дні (днів) |
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| G3R12MT12K |
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Виробник: Navitas Semiconductor, Inc.
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
на замовлення 1538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4829.73 грн |
| 30+ | 3309.10 грн |