G3R20MT12N GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3719.85 грн |
10+ | 3300.69 грн |
25+ | 3194.91 грн |
100+ | 2854.14 грн |
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Технічний опис G3R20MT12N GeneSiC Semiconductor
Description: SIC MOSFET N-CH 105A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 15mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V.
Інші пропозиції G3R20MT12N за ціною від 3088.29 грн до 4039.75 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3R20MT12N | Виробник : GeneSiC Semiconductor | MOSFET 1200V 20mohm SOT-227 G3R SiC MOSFET |
на замовлення 881 шт: термін постачання 320-329 дні (днів) |
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G3R20MT12N | Виробник : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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G3R20MT12N | Виробник : GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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G3R20MT12N | Виробник : GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |