G3R20MT17K GeneSiC Semiconductor

Description: SIC MOSFET N-CH 124A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V, Power Dissipation (Max): 809W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 15mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V.