G3R350MT12D

Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-source voltage: -5...15V
Polarisation: unipolar
Gate charge: 12nC
Type of transistor: N-MOSFET
On-state resistance: 0.35Ω
Power dissipation: 74W
Technology: G3R™; SiC
Drain current: 8A
Kind of channel: enhancement
Pulsed drain current: 16A
Drain-source voltage: 1.2kV

Виробник: GeneSiC Semiconductor
SiC MOSFETs 1200V 350mohm TO-247-3 G3R SiC MOSFET

Виробник: GENESIC
Description: GENESIC - G3R350MT12D - Siliziumkarbid-MOSFET, Eins, n-Kanal, 11 A, 1.2 kV, 0.35 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.69V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 74W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: G3R
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.35ohm
SVHC: No SVHC (17-Dec-2015)

Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V