Продукція > GENESIC SEMICONDUCTOR > G3R40MT12J-TR
G3R40MT12J-TR

G3R40MT12J-TR GeneSiC Semiconductor

G3R40MT12J.pdf Виробник: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1177.59 грн
10+ 1023.76 грн
25+ 982.91 грн
100+ 867.36 грн
250+ 832.79 грн
Відгуки про товар
Написати відгук

Технічний опис G3R40MT12J-TR GeneSiC Semiconductor

Description: 1200V 40M TO-263-7 G3R SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 18mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V.

Інші пропозиції G3R40MT12J-TR

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
G3R40MT12J-TR G3R40MT12J-TR Виробник : GeneSiC Semiconductor G3R40MT12J.pdf Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
товар відсутній
G3R40MT12J-TR G3R40MT12J-TR Виробник : GeneSiC Semiconductor G3R40MT12J-2449624.pdf MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET
товар відсутній