GA35XCP12-247 GeneSiC Semiconductor

Description: IGBT 1200V SOT247, Current - Collector Pulsed (Icm): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Gate Charge: 50 nC, Test Condition: 800V, 35A, 22Ohm, 15V, Switching Energy: 2.66mJ (on), 4.35mJ (off), IGBT Type: PT, Supplier Device Package: TO-247AB, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A, Reverse Recovery Time (trr): 36 ns, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.