GAP3SLT33-214

Виробник: GeneSiC Semiconductor
DIODE SCHOTTKY 3.3KV 300MA DO214 Діоди та діодні збірки

Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V

Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V

Виробник: GeneSiC Semiconductor
SiC Schottky Diodes 3300V - 0.3 A SiC Schottky Rectifier