GB02SLT12-214 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 242.96 грн |
| 10+ | 212.16 грн |
| 25+ | 176.10 грн |
| 100+ | 164.22 грн |
| 250+ | 156.54 грн |
| 500+ | 151.64 грн |
| 1000+ | 145.36 грн |
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Технічний опис GB02SLT12-214 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 131pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Інші пропозиції GB02SLT12-214 за ціною від 146.35 грн до 353.78 грн
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GB02SLT12-214 | Виробник : Navitas Semiconductor, Inc. |
 Description: DIODE SIL CARB 1200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 552 шт: термін постачання 21-31 дні (днів) |
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GB02SLT12-214 | Виробник : Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 1200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
товару немає в наявності |
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GB02SLT12-214 | Виробник : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214; SiC; SMD; 1.2kV; 2A; reel,tape Max. off-state voltage: 1.2kV Case: DO214 Mounting: SMD Max. forward impulse current: 16A Kind of package: reel; tape Type of diode: Schottky rectifying Load current: 2A Technology: SiC Max. forward voltage: 1.5V Semiconductor structure: single diode |
товару немає в наявності |