GB05MPS33-263 GeneSiC Semiconductor

Description: DIODE SIL CARB 3300V 14A TO2637, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 288pF @ 1V, 1MHz, Current - Average Rectified (Io): 14A, Supplier Device Package: TO-263-7, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 3000 V.