GB05MPS33-263 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 2295.70 грн |
| 10+ | 2071.78 грн |
| 25+ | 1739.41 грн |
| 100+ | 1649.33 грн |
| 250+ | 1600.45 грн |
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Технічний опис GB05MPS33-263 GeneSiC Semiconductor
Description: DIODE SIL CARB 3300V 14A TO2637, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 288pF @ 1V, 1MHz, Current - Average Rectified (Io): 14A, Supplier Device Package: TO-263-7, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 3000 V.
Інші пропозиції GB05MPS33-263 за ціною від 1519.94 грн до 2395.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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GB05MPS33-263 | Navitas Semiconductor, Inc. |
 Description: DIODE SIL CARB 3300V 14A TO2637Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 288pF @ 1V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 3000 V |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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| GB05MPS33-263 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2395.17 грн |
| 50+ | 1519.94 грн |