Технічний опис GBPC2510T GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC, Packaging: Bulk, Package / Case: 4-Square, GBPC, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBPC, Part Status: Active, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 25 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Інші пропозиції GBPC2510T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GBPC2510T | Виробник : GeneSiC Semiconductor |
 Description: BRIDGE RECT 1PHASE 1KV 25A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
|
 |
GBPC2510T | Виробник : GeneSiC Semiconductor |
Bridge Rectifiers 1000V 25A Si Bridge Rectifier |
товару немає в наявності |