GP10K-E3/54

GP10K-E3/54 Vishay General Semiconductor


gp10a.pdf Виробник: Vishay General Semiconductor
Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
на замовлення 8609 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+34.56 грн
11+ 28.95 грн
100+ 17.54 грн
500+ 13.68 грн
1000+ 10.63 грн
2500+ 9.63 грн
5500+ 8.7 грн
Мінімальне замовлення: 9
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Технічний опис GP10K-E3/54 Vishay General Semiconductor

Description: DIODE GEN PURP 800V 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.

Інші пропозиції GP10K-E3/54

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GP10K-E3/54 GP10K-E3/54 Виробник : Vishay gp10a.pdf Diode Switching 800V 1A 2-Pin DO-41 T/R
товар відсутній
GP10K-E3/54 GP10K-E3/54 Виробник : Vishay gp10a.pdf Diode Switching 800V 1A 2-Pin DO-41 T/R
товар відсутній
GP10K-E3/54 Виробник : VISHAY gp10a.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 800V
Features of semiconductor devices: glass passivated
Reverse recovery time: 3µs
Capacitance: 7pF
Type of diode: rectifying
Max. forward impulse current: 30A
Max. forward voltage: 1.2V
Load current: 1A
Leakage current: 50µA
кількість в упаковці: 5 шт
товар відсутній
GP10K-E3/54 GP10K-E3/54 Виробник : Vishay General Semiconductor - Diodes Division gp10a.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GP10K-E3/54 GP10K-E3/54 Виробник : Vishay General Semiconductor - Diodes Division gp10a.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GP10K-E3/54 Виробник : VISHAY gp10a.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 800V
Features of semiconductor devices: glass passivated
Reverse recovery time: 3µs
Capacitance: 7pF
Type of diode: rectifying
Max. forward impulse current: 30A
Max. forward voltage: 1.2V
Load current: 1A
Leakage current: 50µA
товар відсутній