GP10K-E3/54 Vishay General Semiconductor
на замовлення 1708 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 58.38 грн |
| 11+ | 35.11 грн |
| 100+ | 20.20 грн |
| 500+ | 15.76 грн |
| 1000+ | 13.47 грн |
| 2500+ | 12.24 грн |
| 5500+ | 10.56 грн |
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Технічний опис GP10K-E3/54 Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Інші пропозиції GP10K-E3/54
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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GP10K-E3/54 | Виробник : Vishay |
 Diode Switching 800V 1A 2-Pin DO-41 T/R |
товару немає в наявності |
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GP10K-E3/54 | Виробник : Vishay |
Diode Switching 800V 1A 2-Pin DO-41 T/R |
товару немає в наявності |
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| GP10K-E3/54 | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; 13 inch reel; Ifsm: 30A; DO41; 3us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Case: DO41 Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated Capacitance: 7pF Reverse recovery time: 3µs Leakage current: 50µA Max. forward voltage: 1.2V Max. forward impulse current: 30A кількість в упаковці: 1 шт |
товару немає в наявності |
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GP10K-E3/54 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
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GP10K-E3/54 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
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GP10K-E3\54 | Виробник : Vishay Semiconductors | Rectifiers 1A,800V,STD,SUPERECT,NOT FOR NEW DESIGN |
товару немає в наявності |
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| GP10K-E3/54 | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; 13 inch reel; Ifsm: 30A; DO41; 3us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Case: DO41 Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated Capacitance: 7pF Reverse recovery time: 3µs Leakage current: 50µA Max. forward voltage: 1.2V Max. forward impulse current: 30A |
товару немає в наявності |