GT30J341,Q Toshiba
| Кількість | Ціна |
|---|---|
| 2+ | 254.34 грн |
| 10+ | 211.89 грн |
| 50+ | 178.63 грн |
| 100+ | 153.31 грн |
| 200+ | 148.39 грн |
| 500+ | 135.73 грн |
| 1000+ | 109.00 грн |
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Технічний опис GT30J341,Q Toshiba
Description: IGBT 600V 59A TO-3P, Power - Max: 230 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 59 A, Part Status: Active, Test Condition: 300V, 30A, 24Ohm, 15V, Switching Energy: 800µJ (on), 600µJ (off), Td (on/off) @ 25°C: 80ns/280ns, Supplier Device Package: TO-3P(N), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 50 ns, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tray.
Інші пропозиції GT30J341,Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GT30J341,Q | Toshiba Semiconductor and Storage |
 Description: IGBT 600V 59A TO-3PPower - Max: 230 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 59 A Part Status: Active Test Condition: 300V, 30A, 24Ohm, 15V Switching Energy: 800µJ (on), 600µJ (off) Td (on/off) @ 25°C: 80ns/280ns Supplier Device Package: TO-3P(N) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Reverse Recovery Time (trr): 50 ns Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
| GT30J341,Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 59A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 59 A
Part Status: Active
Test Condition: 300V, 30A, 24Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 80ns/280ns
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
Description: IGBT 600V 59A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 59 A
Part Status: Active
Test Condition: 300V, 30A, 24Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 80ns/280ns
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.