GT30J65MRB,S1E Toshiba Semiconductor and Storage

Description: 650V SILICON N-CHANNEL IGBT, TO-, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-3P(N), Td (on/off) @ 25°C: 75ns/400ns, Switching Energy: 1.4mJ (on), 220µJ (off), Test Condition: 400V, 15A, 56Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 200 W.