GT40QR21(STA1,E,D TOSHIBA
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Collector current: 35A
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.6µs
Power dissipation: 230W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 0.3µs
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 380.33 грн |
| 10+ | 209.40 грн |
| 25+ | 180.32 грн |
| 50+ | 174.50 грн |
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Технічний опис GT40QR21(STA1,E,D TOSHIBA
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN, Collector current: 35A, Case: TO3PN, Gate-emitter voltage: ±25V, Pulsed collector current: 80A, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 0.6µs, Power dissipation: 230W, Collector-emitter voltage: 1.2kV, Type of transistor: IGBT, Kind of package: tube, Mounting: THT, Turn-on time: 0.3µs.