GT40QR21(STA1,E,D TOSHIBA
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 35A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Features of semiconductor devices: integrated anti-parallel diode
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 387.44 грн |
| 10+ | 213.32 грн |
| 25+ | 183.69 грн |
| 50+ | 177.77 грн |
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Технічний опис GT40QR21(STA1,E,D TOSHIBA
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 35A, Power dissipation: 230W, Case: TO3PN, Gate-emitter voltage: ±25V, Pulsed collector current: 80A, Mounting: THT, Kind of package: tube, Turn-on time: 0.3µs, Turn-off time: 0.6µs, Features of semiconductor devices: integrated anti-parallel diode.