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Технічний опис GT40RR21(STA1,E Toshiba
Description: IGBT 1200V 40A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 540µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 230 W.
Інші пропозиції GT40RR21(STA1,E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
GT40RR21(STA1,E | Toshiba Semiconductor and Storage |
 Description: IGBT 1200V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 540µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 230 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
GT40RR21(STA1,E | Toshiba |
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| GT40RR21(STA1,E |
|
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
товару немає в наявності
В кошику
од. на суму грн.
| GT40RR21(STA1,E |
|
Виробник: Toshiba
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.