GT40WR21,Q(O TOSHIBA
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Kind of package: tube
Case: TO3PN
Turn-off time: 570ns
Turn-on time: 950ns
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 80A
Collector-emitter voltage: 1.8kV
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 926.21 грн |
| 5+ | 770.31 грн |
| 25+ | 680.56 грн |
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Технічний опис GT40WR21,Q(O TOSHIBA
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN, Kind of package: tube, Case: TO3PN, Turn-off time: 570ns, Turn-on time: 950ns, Power dissipation: 375W, Gate-emitter voltage: ±25V, Collector current: 40A, Pulsed collector current: 80A, Collector-emitter voltage: 1.8kV, Mounting: THT, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode.