GT50N322A Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
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Технічний опис GT50N322A Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO-3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 800 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A, Supplier Device Package: TO-3P(N), Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 156 W.
