GT60N321(Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
Description: IGBT 1000V 60A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
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Технічний опис GT60N321(Q) Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A TO-3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 2.5 µs, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A, Supplier Device Package: TO-3P(LH), Td (on/off) @ 25°C: 330ns/700ns, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 170 W.
Інші пропозиції GT60N321(Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GT60N321(Q) | Виробник : Toshiba |
 IGBT Transistors IGBT 1000V 60A |
товару немає в наявності |