Технічний опис HGTP5N120BND FAIRCHIL..
Description: IGBT NPT 1200V 21A TO-220-3, Reverse Recovery Time (trr): 65 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 167 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 21 A, Part Status: Obsolete, Gate Charge: 53 nC, Test Condition: 960V, 5A, 25Ohm, 15V, Switching Energy: 450µJ (on), 390µJ (off), Td (on/off) @ 25°C: 22ns/160ns, IGBT Type: NPT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A.
Інші пропозиції HGTP5N120BND
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| HGTP5N120BND | Виробник : ONS/FAI |
 Trans IGBT Chip N-CH 1200V 21A 167W 3-Pin(3+Tab) TO-220 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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HGTP5N120BND | Виробник : onsemi |
Description: IGBT NPT 1200V 21A TO-220-3 Reverse Recovery Time (trr): 65 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 167 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 21 A Part Status: Obsolete Gate Charge: 53 nC Test Condition: 960V, 5A, 25Ohm, 15V Switching Energy: 450µJ (on), 390µJ (off) Td (on/off) @ 25°C: 22ns/160ns IGBT Type: NPT Supplier Device Package: TO-220-3 Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A |
товару немає в наявності |
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HGTP5N120BND | Виробник : onsemi / Fairchild |
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch |
товару немає в наявності |