HN1A01F-Y(TE85L,F) Toshiba
| Кількість | Ціна |
|---|---|
| 10+ | 34.94 грн |
| 100+ | 15.40 грн |
| 1000+ | 9.28 грн |
| 3000+ | 7.81 грн |
| 9000+ | 5.13 грн |
| 24000+ | 4.78 грн |
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Технічний опис HN1A01F-Y(TE85L,F) Toshiba
Description: TRANS 2PNP 50V 0.15A SM6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 300mW, Operating Temperature: 125°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Cut Tape (CT), Part Status: Active, Supplier Device Package: SM6.
Інші пропозиції HN1A01F-Y(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
HN1A01F-Y(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A SM6Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SM6 |
товару немає в наявності |