Технічний опис HN1A01FE-GR,LF Toshiba
Description: TRANS 2PNP 50V 0.15A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Part Status: Active.
Інші пропозиції HN1A01FE-GR,LF
| Фото | Назва | Виробник | Інформація |
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Ціна |
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HN1A01FE-GR,LF | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
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HN1A01FE-GR,LF | Виробник : Toshiba |
Bipolar Transistors - BJT Bias Resistor Built-in transistor |
товару немає в наявності |