HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
| Кількість | Ціна |
|---|---|
| 4000+ | 12.63 грн |
Відгуки про товар
Написати відгук
Технічний опис HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50, Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ).
Інші пропозиції HN1A01FE-GR,LXHF за ціною від 8.58 грн до 48.65 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
HN1A01FE-GR,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50 Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
на замовлення 7702 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
HN1A01FE-GR,LXHF | Виробник : Toshiba |
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6) |
на замовлення 7700 шт: термін постачання 21-30 дні (днів) |
|