Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1A01FE-Y,LF
HN1A01FE-Y,LF

HN1A01FE-Y,LF Toshiba Semiconductor and Storage

HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис HN1A01FE-Y,LF Toshiba Semiconductor and Storage

Description: TRANS 2PNP 50V 0.15A ES6, Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Інші пропозиції HN1A01FE-Y,LF

Фото Назва Виробник Інформація Доступність
Ціна
HN1A01FE-Y,LF HN1A01FE-Y,LF Виробник : Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: TRANS 2PNP 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
HN1A01FE-Y,LF HN1A01FE-Y,LF Виробник : Toshiba HN1A01FE_datasheet_en_20210818-1140132.pdf Bipolar Transistors - BJT ES6 PLN
товару немає в наявності
В кошику  од. на суму  грн.