HN1A01FE-Y,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS 2PNP DUAL 50V 150MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 11.36 грн |
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Технічний опис HN1A01FE-Y,LXHF Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції HN1A01FE-Y,LXHF за ціною від 9.83 грн до 50.81 грн
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HN1A01FE-Y,LXHF | Виробник : Toshiba |
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6) |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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HN1A01FE-Y,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 50V 150MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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