HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.94 грн |
6000+ | 8.17 грн |
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Технічний опис HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.
Інші пропозиції HN1C01FU-GR,LXHF за ціною від 7.34 грн до 28.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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HN1C01FU-GR,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-GR,LXHF | Виробник : Toshiba | Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6) |
на замовлення 5705 шт: термін постачання 21-30 дні (днів) |
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