HN1C01FU-Y,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: NPN + NPN IND. TRANSISTOR VCEO50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 12276 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.32 грн |
| 45+ | 6.88 грн |
| 100+ | 4.58 грн |
| 500+ | 3.27 грн |
| 1000+ | 2.92 грн |
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Технічний опис HN1C01FU-Y,LF Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO50, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.
Інші пропозиції HN1C01FU-Y,LF за ціною від 1.83 грн до 11.13 грн
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HN1C01FU-Y,LF | Виробник : Toshiba |
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package |
на замовлення 2674 шт: термін постачання 21-30 дні (днів) |
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HN1C01FU-Y,LF | Виробник : Toshiba Semiconductor and Storage |
Description: NPN + NPN IND. TRANSISTOR VCEO50 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
товару немає в наявності |