HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.61 грн |
| 14+ | 23.41 грн |
| 100+ | 11.82 грн |
| 500+ | 9.04 грн |
| 1000+ | 6.71 грн |
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Технічний опис HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.6 ns, Technology: Standard, Diode Configuration: 2 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: ES6, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Інші пропозиції HN1D01FE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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Ціна |
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HN1D01FE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ES6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
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HN1D01FE(TE85L,F) | Виробник : Toshiba |
Diodes - General Purpose, Power, Switching Switching diode, 80V ES6 0.1A High Speed |
товару немає в наявності |