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HN1D02F(TE85L,F) Toshiba


9CAE0A28716D4DD28EDDA1F7D3D0C248311517F9BEDD4E2F74DB6A5D443C7865.pdf
Виробник: Toshiba
Small Signal Switching Diodes SM6 M8 DIODE (LF), IFM=300mA
на замовлення 7357 шт:
термін постачання 21-30 дні (днів)
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Технічний опис HN1D02F(TE85L,F) Toshiba

Description: DIODE ARRAY GP 80V 100MA SM6, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: SM6, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 2 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).

Інші пропозиції HN1D02F(TE85L,F)

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.