HN1D03FU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Технічний опис HN1D03FU,LF Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: US6, Current - Average Rectified (Io) (per Diode): 80mA, Diode Configuration: 2 Pair CA + CC, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції HN1D03FU,LF за ціною від 4.80 грн до 24.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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HN1D03FU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 80mA Diode Configuration: 2 Pair CA + CC Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 4415 шт: термін постачання 21-31 дні (днів) |
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HN1D03FU,LF | Toshiba |
Small Signal Switching Diodes High Speed Switching Diode |
на замовлення 8553 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| HN1D03FU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 4415 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.74 грн |
| 18+ | 16.68 грн |
| 100+ | 8.45 грн |
| 500+ | 6.47 грн |
| 1000+ | 4.80 грн |
| HN1D03FU,LF |
|
Виробник: Toshiba
Small Signal Switching Diodes High Speed Switching Diode
Small Signal Switching Diodes High Speed Switching Diode
на замовлення 8553 шт:
термін постачання 21-30 дні (днів)