HN2A01FU-Y(TE85L,F Toshiba
| Кількість | Ціна |
|---|---|
| 12+ | 28.96 грн |
| 19+ | 17.39 грн |
| 100+ | 9.56 грн |
| 500+ | 7.10 грн |
| 3000+ | 7.03 грн |
| 6000+ | 5.98 грн |
| 24000+ | 4.57 грн |
Відгуки про товар
Написати відгук
Технічний опис HN2A01FU-Y(TE85L,F Toshiba
Description: TRANS 2PNP 50V 0.15A US6, Operating Temperature: 125°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Cut Tape (CT), Supplier Device Package: US6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 200mW.
Інші пропозиції HN2A01FU-Y(TE85L,F за ціною від 6.62 грн до 34.81 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
HN2A01FU-Y(TE85L,F | Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A US6Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW |
на замовлення 2298 шт: термін постачання 21-31 дні (днів) |
|
| HN2A01FU-Y(TE85L,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Description: TRANS 2PNP 50V 0.15A US6
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 14+ | 23.08 грн |
| 100+ | 11.65 грн |
| 500+ | 8.92 грн |
| 1000+ | 6.62 грн |