Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > HN2D02FU,LF

HN2D02FU,LF Toshiba Semiconductor and Storage

Name: HN2D02FU,LF
Brand: Toshiba Semiconductor and Storage
SKU: 12992296-3
Price: 342.96 UAH
Availability: InStock

HN2D02FU_datasheet_en_20210625.pdf?did=3683&prodName=HN2D02FU

Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V

на замовлення 3045 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
12+	28.58 грн
17+	19.58 грн
100+	9.90 грн
500+	8.24 грн
1000+	6.41 грн

Мінімальне замовлення: 12

В кошику од. на суму грн.

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Технічний опис HN2D02FU,LF Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 80MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 3 Independent, Current - Average Rectified (Io) (per Diode): 80mA, Supplier Device Package: US6, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Інші пропозиції HN2D02FU,LF

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	HN2D02FU,LF	Виробник : Toshiba Semiconductor and Storage	Description: DIODE ARRAY GP 80V 80MA US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V	товару немає в наявності	В кошику од. на суму грн.