HN4A51JTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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Технічний опис HN4A51JTE85LF Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV, Supplier Device Package: SMV, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR).
Інші пропозиції HN4A51JTE85LF за ціною від 9.99 грн до 41.57 грн
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HN4A51JTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 120V 100MA SMV Supplier Device Package: SMV Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 7492 шт: термін постачання 21-31 дні (днів) |
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HN4A51JTE85LF | Toshiba |
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
на замовлення 10921 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| HN4A51JTE85LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 7492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.57 грн |
| 12+ | 24.76 грн |
| 100+ | 15.77 грн |
| 500+ | 11.16 грн |
| 1000+ | 9.99 грн |
| HN4A51JTE85LF |
|
Виробник: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
на замовлення 10921 шт:
термін постачання 21-30 дні (днів)