HN4B04J(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
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Технічний опис HN4B04J(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: SMV, Part Status: Obsolete.
Інші пропозиції HN4B04J(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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HN4B04J(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 30V 0.5A SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SMV Part Status: Obsolete |
товар відсутній |
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HN4B04J(TE85L,F) | Виробник : Toshiba | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
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