IDH20G65C6 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 838.10 грн |
| 25+ | 799.41 грн |
| 50+ | 767.24 грн |
| 100+ | 713.75 грн |
| 250+ | 640.38 грн |
| 500+ | 597.92 грн |
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Технічний опис IDH20G65C6 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 6G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 20A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.25V, Max. forward impulse current: 79A, Leakage current: 153µA, Power dissipation: 108W, Kind of package: tube, Heatsink thickness: 1.17...1.37mm.
Інші пропозиції IDH20G65C6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IDH20G65C6 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
товару немає в наявності |
В кошику од. на суму грн. | |
|
IDH20G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W Type of diode: Schottky rectifying Technology: CoolSiC™ 6G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 79A Leakage current: 153µA Power dissipation: 108W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
товару немає в наявності |
В кошику од. на суму грн. |
| IDH20G65C6 |
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Виробник: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
товару немає в наявності
В кошику
од. на суму грн.
| IDH20G65C6XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
товару немає в наявності
В кошику
од. на суму грн.




