Технічний опис IKQ75N120CT2 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3, Type of transistor: IGBT, Technology: TRENCHSTOP™ 2, Collector-emitter voltage: 1.2kV, Collector current: 75A, Power dissipation: 237W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 0.37µC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode.
Інші пропозиції IKQ75N120CT2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IKQ75N120CT2 | Infineon Technologies |
 IGBT Transistors INDUSTRY 14 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 237W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IKQ75N120CT2 |
|
Виробник: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
товару немає в наявності
В кошику
од. на суму грн.
| IKQ75N120CT2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.