Технічний опис IKQ75N120CT2 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3, Mounting: THT, Pulsed collector current: 300A, Type of transistor: IGBT, Kind of package: tube, Case: TO247-3, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 1.2kV, Power dissipation: 237W, Gate charge: 0.37µC, Technology: TRENCHSTOP™ 2, Features of semiconductor devices: integrated anti-parallel diode.
Інші пропозиції IKQ75N120CT2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IKQ75N120CT2 | Infineon Technologies |
 IGBT Transistors INDUSTRY 14 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Mounting: THT Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 237W Gate charge: 0.37µC Technology: TRENCHSTOP™ 2 Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IKQ75N120CT2 |
|
Виробник: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
товару немає в наявності
В кошику
од. на суму грн.
| IKQ75N120CT2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 237W
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 237W
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.