Технічний опис IPP04CN10NG INFINEON
Description: MOSFET N-CH 100V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V.
Інші пропозиції IPP04CN10NG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPP04CN10NG | Infineon Technologies |
 Description: MOSFET N-CH 100V 100A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
 |
IPP04CN10NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Kind of channel: enhancement Gate charge: 158nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP04CN10NG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IPP04CN10NGXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 158nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 158nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.