IRC740PBF Vishay Siliconix

Description: MOSFET N-CH 400V 10A TO220-5, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-5, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), FET Feature: Current Sensing, Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-5, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.