| Кількість | Ціна |
|---|---|
| 3+ | 118.12 грн |
| 10+ | 96.36 грн |
| 100+ | 64.59 грн |
| 500+ | 61.66 грн |
| 1000+ | 44.55 грн |
| 10000+ | 43.85 грн |
| 25000+ | 43.78 грн |
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Технічний опис IRF614PBF Vishay / Siliconix
Description: MOSFET N-CH 250V 2.7A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.