на замовлення 580 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155 грн |
| 10+ | 126.68 грн |
| 100+ | 87.46 грн |
| 500+ | 74.11 грн |
| 800+ | 62.09 грн |
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Технічний опис IRF634STRRPBF Vishay Semiconductors
Description: MOSFET N-CH 250V 8.1A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V.
Інші пропозиції IRF634STRRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
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IRF634STRRPBF | Виробник : Vishay |
 Trans MOSFET N-CH 250V 8.1A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IRF634STRRPBF | Виробник : Vishay |
Trans MOSFET N-CH 250V 8.1A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| IRF634STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.1A; Idm: 32A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.1A Pulsed drain current: 32A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRF634STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 250V 8.1A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
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IRF634STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 250V 8.1A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
товар відсутній |
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| IRF634STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.1A; Idm: 32A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.1A Pulsed drain current: 32A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
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