IRF744L Vishay Siliconix

Description: MOSFET N-CH 450V 8.8A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 630mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.