Технічний опис IRF7507TR
Description: MOSFET N/P-CH 20V 2.4A MICRO8, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Cut Tape (CT), Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A, Drain to Source Voltage (Vdss): 20V.
Інші пропозиції IRF7507TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRF7507TR | Infineon Technologies |
Description: MOSFET N/P-CH 20V 2.4A MICRO8Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Drain to Source Voltage (Vdss): 20V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7507TR |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.4A MICRO8
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Drain to Source Voltage (Vdss): 20V
Description: MOSFET N/P-CH 20V 2.4A MICRO8
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Drain to Source Voltage (Vdss): 20V
товару немає в наявності
В кошику
од. на суму грн.



